NEXT-GENERATION POWER SEMICONDUCTORS: MARKETS MATERIALS, TECHNOLOGIES
出 版 商：The Information Network
出版日期：2016/10/01
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USD 2,495 (Single-User License)
Chapter 1 Introduction 1-1
1.1 Manufacturing Processes Are Differentiation Factors 1-3
1.2 Vertical Structure Devices Differ From Usual MOS
Planar Structure 1-8
1.3 Super Junction Processes 1-12
Chapter 2 Applications of Power Semiconductors 2-1
2.1 Power Semiconductors in Renewable Energy 2-3
2.1.1 Solar 2-3
2.1.2 Wind 2-12
2.2 Power Semiconductors in Hybrid & Electric Vehicles 2-18
2.2.1 Automotive Megatrends 2-18
2.2.2 Wide Bandgap Devices for HEVs/EVs 2-30
2.3 Power Semiconductors in LED Lighting 2-39
2.4 Power Semiconductors in Industrial Motor Drives 2-53
2.5 Power Semiconductors in Smart Home Market 2-60
2.6 GaN and SiC Market Forecast For End Applications 2-66
Chapter 3 Market Analysis 3-1
3.1 Position of Power Semiconductors in Semiconductor Market 3-9
3.2 Growth Potential of IGBTs and Power MOSFETs 3-11
3.3 End Application Markets 3-23
3.4 Wide Bandgap Power Semiconductor Market 3-29
Chapter 4 Next-Generation Power Semiconductors 4-1
4.1 Expectations for Overcoming Silicon's Limitations 4-1
4.2 Expectations Of SiC and GaN as Next-Generation Substrates 4-3
4.3 Benefits of Wide Band Gap Semiconductors 4-3
4.4 SiC versus GaN 4-5
4.4.1 Material Properties 4-6
4.4.2 Material Quality 4-8
4.4.3 SiC Lateral Devices: 4-10
4.4.4 SiC Vertical Devices 4-10
4.4.5 GaN Lateral Devices 4-12
4.5 Fabrication of SiC devices 4-22
4.5.1 Bulk and Epitaxial Growth of SiC 4-22
4.5.1.1 Bulk Growth 4-22
4.5.1.2 Epitaxial Growth 4-23
4.5.1.3 Defects 4-23
4.5.2 Surface Preparation 4-25
4.5.3 Etching 4-27
4.5.4 Lithography 4-28
4.5.5 Ion Implantation 4-28
4.5.6 Surface Passivation 4-29
4.5.7 Metallization 4-32
4.6 Fabrication of GaN devices 4-33
4.6.1 GaN Challenges 4-37
4.6.1.1 Costs 4-37
4.6.1.2 Reliability 4-40
4.6.1.3 Component Packaging and Thermal Reliability 4-41
4.6.1.4 Control 4-41
4.6.1.5 Device Modeling 4-42
4.7 Packaging 4-42
Chapter 5 Company Profiles 5-1
5.1 Power Semiconductor Companies 5-1
5.1.1 Infineon 5-1
5.1.2 Mitsubishi 5-3
5.1.3 Toshiba 5-5
5.1.4 STMicroelectronics 5-7
5.1.5 Vishay 5-8
5.1.6 International Rectifier 5-11
5.1.7 Fairchild 5-13
5.1.8 Fuji Electric 5-16
5.1.9 Renesas 5-17
5.1.10 Semikron 5-19
5.1.11 NXP Semiconductors 5-20
5.2 SiC Wafer-Related Companies 5-22
5.3 GaN Wafer-Related Companies 5-22
5.4 Profiles of Companies with Next-Generation Activities 5-23
5.4.1 Mitsubishi Electric 5-23
5.4.2 Fuji Electric Holdings 5-24
5.4.3 Toshiba 5-25
5.4.4 Rohm 5-26
5.4.5 Sanken Electric 5-28
5.4.6 Shindengen Electric 5-29
5.4.7 Infineon 5-31
5.4.8 Microsemi 5-32
5.4.9 Cree 5-33
5.4.10 GeneSiC Semiconductor 5-34
5.4.11 Semisouth Laboratories 5-35
5.4.12 United Silicon Carbide 5-36
5.4.13 MicroGaN 5-37
5.4.14 Powerex 5-38
5.4.15 Fairchild 5-38
5.4.16 International Rectifier 5-39
5.4.17 Nitronix 5-39
List of Figures
1.1 Evolution Of IGBT Chip Structure 1-4
1.2 Effects Of Miniaturization Of IGBT Chip 1-6
1.3 SiC Trench-Type MOSFET And Resistance Reduction As Compared With DMOSFET 1-7
1.4 Planar And Vertical (Trench) MOSFET 1-9
1.5 Schematic Of A FinFET 1-11
1.6 Schematic Of A MOSFET And Super Junction MOSFET 1-13
1.7 Process Flow For Super Junction MOSFET 1-14
2.1 Forecast Of Solar Power 2-4
2.2 Full Bridge IGBT Topology 2-5
2.3 PV Inverter Market Distribution 2-8
2.4 Block Diagram Of Microcontroller-Based Inverter 2-11
2.5 Worldwide Wind Turbine Shipments 2-14
2.6 Top Wind Power Capacity by Country 2-15
2.7 Bill Of Materials For A Typical 30-50kw Inverter 2-20
2.8 A Simple Diagram Of A HEV Traction Drive System. 2-22
2.9 A More Complex Diagram Of PEEM In A Plug-In Hybrid Electric Vehicle (PHEV) 2-23
2.10 Conducting And Switching Loses For Inverter 2-25
2.11 Unit Pricing Trends In Power Semiconductors 2-27
2.12 HEV/EV Shipment Forecast 2-31
2.13 System And Component Costs For Wide Bandgap Semiconductors 2-32
2.14 Vertical And Lateral HEMY 2-34
2.15 GaN Lateral And GaN Vertical HEMTs In EVs 2-38
2.16 Market Drivers For LED Biz And Applications 2-41
2.17 SSL Vs. Classical Technologies 2-42
2.18 LED Performance Vs. Traditional Light Sources 2-43
2.19 Energy Production And Use Comparison 2-46
2.20 Typical LED Drive Circuit 2-49
2.21 Integration Of LED And LED Driver Using TSV 2-52
2.22 Simple Power MOSFET Motor Controller 2-57
2.23 Basic Operating Principle Of Inverter 2-63
2.24 System Block Diagram Of An Air Conditioner 2-65
3.1 Mitsubishi’s IGBT (Insulated Gate Bipolar Transistor) Generations 3-3
3.2 Infineon’s MOSFET Generations 3-4
3.3 Intel’s FinFET Design 3-5
3.4 Fuji’s MOSFET versus Super Junction MOSFET 3-6
3.5 NEC's GaN-on-Si Power Transistor 3-7
3.6 Fujitsu’s GaN-on-SiC HEMT Transistor 3-8
3.7 Power Semiconductor Market Forecast 3-10
3.8 Power Semiconductor Market Shares 3-12
3.9 IGBT Module Market Shares 3-13
3-10 IGBT Discrete Market Shares 3-14
3.11 MOSFET Market Shares 3-15
3.12 Market Shares For Super Junction MOSFET 3-21
3.13 SJ MOSFETs as an Interim Solution 3-22
3.14 Power Transistor Market Share By Application 3-24
3.15 Power Discrete Market For Renewable Energy 3-25
3.16 Power Discrete Market Hybrid For and Electric Vehicles 3-26
3.17 Power Discrete Market For General LED Lighting 3-27
3.18 Power Discrete Market For Industrial Motor Control 3-28
3.19 Forecast of Widebandgap Semiconductor Market 3-30
4.1 Silicon-Based Devices Reaching Maturity 4-2
4.2 Enhancement Mode GaN On Si Transistor 4-14
4.3 AlGaN/GaN HEMT, GaN MOSFET, MOS-HEMT 4-18
4.4 GaN HEMT Material Structure On Si Substrate 4-34
4.5 Power Package Integration Roadmap 4-43
List of Tables
2.1 Product Families And The Principal End Uses Of
Power Products 2-2
2.2 Advantages And Disadvantages Of GaN Lateral HEMTs 2-36
2.3 Light Source Comparison 2-46
2.4 Forecast Of GaN And SiC Power Devices By End Applications 2-73
3.1 Market Shares For Japanese Companies 3-18
4.1 Physical Properties Of Select Semiconductor Materials 4-4
4.2 Wide Bandgap Material Properties 4-7
4.3 Lattice Constant And CTE Of Semiconductor Starting Material 4-11
4.4 GaN FET Vs Si MOSFET Characteristics 4-16
4.5 Standard Chemical Solution For Surface Preparation Of SiC Substrates 4-26
4.6 Interface Trap Densities For 4H-SiC Under Different Process Conditions. 4-31
1.1 Manufacturing Processes Are Differentiation Factors 1-3
1.2 Vertical Structure Devices Differ From Usual MOS
Planar Structure 1-8
1.3 Super Junction Processes 1-12
Chapter 2 Applications of Power Semiconductors 2-1
2.1 Power Semiconductors in Renewable Energy 2-3
2.1.1 Solar 2-3
2.1.2 Wind 2-12
2.2 Power Semiconductors in Hybrid & Electric Vehicles 2-18
2.2.1 Automotive Megatrends 2-18
2.2.2 Wide Bandgap Devices for HEVs/EVs 2-30
2.3 Power Semiconductors in LED Lighting 2-39
2.4 Power Semiconductors in Industrial Motor Drives 2-53
2.5 Power Semiconductors in Smart Home Market 2-60
2.6 GaN and SiC Market Forecast For End Applications 2-66
Chapter 3 Market Analysis 3-1
3.1 Position of Power Semiconductors in Semiconductor Market 3-9
3.2 Growth Potential of IGBTs and Power MOSFETs 3-11
3.3 End Application Markets 3-23
3.4 Wide Bandgap Power Semiconductor Market 3-29
Chapter 4 Next-Generation Power Semiconductors 4-1
4.1 Expectations for Overcoming Silicon's Limitations 4-1
4.2 Expectations Of SiC and GaN as Next-Generation Substrates 4-3
4.3 Benefits of Wide Band Gap Semiconductors 4-3
4.4 SiC versus GaN 4-5
4.4.1 Material Properties 4-6
4.4.2 Material Quality 4-8
4.4.3 SiC Lateral Devices: 4-10
4.4.4 SiC Vertical Devices 4-10
4.4.5 GaN Lateral Devices 4-12
4.5 Fabrication of SiC devices 4-22
4.5.1 Bulk and Epitaxial Growth of SiC 4-22
4.5.1.1 Bulk Growth 4-22
4.5.1.2 Epitaxial Growth 4-23
4.5.1.3 Defects 4-23
4.5.2 Surface Preparation 4-25
4.5.3 Etching 4-27
4.5.4 Lithography 4-28
4.5.5 Ion Implantation 4-28
4.5.6 Surface Passivation 4-29
4.5.7 Metallization 4-32
4.6 Fabrication of GaN devices 4-33
4.6.1 GaN Challenges 4-37
4.6.1.1 Costs 4-37
4.6.1.2 Reliability 4-40
4.6.1.3 Component Packaging and Thermal Reliability 4-41
4.6.1.4 Control 4-41
4.6.1.5 Device Modeling 4-42
4.7 Packaging 4-42
Chapter 5 Company Profiles 5-1
5.1 Power Semiconductor Companies 5-1
5.1.1 Infineon 5-1
5.1.2 Mitsubishi 5-3
5.1.3 Toshiba 5-5
5.1.4 STMicroelectronics 5-7
5.1.5 Vishay 5-8
5.1.6 International Rectifier 5-11
5.1.7 Fairchild 5-13
5.1.8 Fuji Electric 5-16
5.1.9 Renesas 5-17
5.1.10 Semikron 5-19
5.1.11 NXP Semiconductors 5-20
5.2 SiC Wafer-Related Companies 5-22
5.3 GaN Wafer-Related Companies 5-22
5.4 Profiles of Companies with Next-Generation Activities 5-23
5.4.1 Mitsubishi Electric 5-23
5.4.2 Fuji Electric Holdings 5-24
5.4.3 Toshiba 5-25
5.4.4 Rohm 5-26
5.4.5 Sanken Electric 5-28
5.4.6 Shindengen Electric 5-29
5.4.7 Infineon 5-31
5.4.8 Microsemi 5-32
5.4.9 Cree 5-33
5.4.10 GeneSiC Semiconductor 5-34
5.4.11 Semisouth Laboratories 5-35
5.4.12 United Silicon Carbide 5-36
5.4.13 MicroGaN 5-37
5.4.14 Powerex 5-38
5.4.15 Fairchild 5-38
5.4.16 International Rectifier 5-39
5.4.17 Nitronix 5-39
List of Figures
1.1 Evolution Of IGBT Chip Structure 1-4
1.2 Effects Of Miniaturization Of IGBT Chip 1-6
1.3 SiC Trench-Type MOSFET And Resistance Reduction As Compared With DMOSFET 1-7
1.4 Planar And Vertical (Trench) MOSFET 1-9
1.5 Schematic Of A FinFET 1-11
1.6 Schematic Of A MOSFET And Super Junction MOSFET 1-13
1.7 Process Flow For Super Junction MOSFET 1-14
2.1 Forecast Of Solar Power 2-4
2.2 Full Bridge IGBT Topology 2-5
2.3 PV Inverter Market Distribution 2-8
2.4 Block Diagram Of Microcontroller-Based Inverter 2-11
2.5 Worldwide Wind Turbine Shipments 2-14
2.6 Top Wind Power Capacity by Country 2-15
2.7 Bill Of Materials For A Typical 30-50kw Inverter 2-20
2.8 A Simple Diagram Of A HEV Traction Drive System. 2-22
2.9 A More Complex Diagram Of PEEM In A Plug-In Hybrid Electric Vehicle (PHEV) 2-23
2.10 Conducting And Switching Loses For Inverter 2-25
2.11 Unit Pricing Trends In Power Semiconductors 2-27
2.12 HEV/EV Shipment Forecast 2-31
2.13 System And Component Costs For Wide Bandgap Semiconductors 2-32
2.14 Vertical And Lateral HEMY 2-34
2.15 GaN Lateral And GaN Vertical HEMTs In EVs 2-38
2.16 Market Drivers For LED Biz And Applications 2-41
2.17 SSL Vs. Classical Technologies 2-42
2.18 LED Performance Vs. Traditional Light Sources 2-43
2.19 Energy Production And Use Comparison 2-46
2.20 Typical LED Drive Circuit 2-49
2.21 Integration Of LED And LED Driver Using TSV 2-52
2.22 Simple Power MOSFET Motor Controller 2-57
2.23 Basic Operating Principle Of Inverter 2-63
2.24 System Block Diagram Of An Air Conditioner 2-65
3.1 Mitsubishi’s IGBT (Insulated Gate Bipolar Transistor) Generations 3-3
3.2 Infineon’s MOSFET Generations 3-4
3.3 Intel’s FinFET Design 3-5
3.4 Fuji’s MOSFET versus Super Junction MOSFET 3-6
3.5 NEC's GaN-on-Si Power Transistor 3-7
3.6 Fujitsu’s GaN-on-SiC HEMT Transistor 3-8
3.7 Power Semiconductor Market Forecast 3-10
3.8 Power Semiconductor Market Shares 3-12
3.9 IGBT Module Market Shares 3-13
3-10 IGBT Discrete Market Shares 3-14
3.11 MOSFET Market Shares 3-15
3.12 Market Shares For Super Junction MOSFET 3-21
3.13 SJ MOSFETs as an Interim Solution 3-22
3.14 Power Transistor Market Share By Application 3-24
3.15 Power Discrete Market For Renewable Energy 3-25
3.16 Power Discrete Market Hybrid For and Electric Vehicles 3-26
3.17 Power Discrete Market For General LED Lighting 3-27
3.18 Power Discrete Market For Industrial Motor Control 3-28
3.19 Forecast of Widebandgap Semiconductor Market 3-30
4.1 Silicon-Based Devices Reaching Maturity 4-2
4.2 Enhancement Mode GaN On Si Transistor 4-14
4.3 AlGaN/GaN HEMT, GaN MOSFET, MOS-HEMT 4-18
4.4 GaN HEMT Material Structure On Si Substrate 4-34
4.5 Power Package Integration Roadmap 4-43
List of Tables
2.1 Product Families And The Principal End Uses Of
Power Products 2-2
2.2 Advantages And Disadvantages Of GaN Lateral HEMTs 2-36
2.3 Light Source Comparison 2-46
2.4 Forecast Of GaN And SiC Power Devices By End Applications 2-73
3.1 Market Shares For Japanese Companies 3-18
4.1 Physical Properties Of Select Semiconductor Materials 4-4
4.2 Wide Bandgap Material Properties 4-7
4.3 Lattice Constant And CTE Of Semiconductor Starting Material 4-11
4.4 GaN FET Vs Si MOSFET Characteristics 4-16
4.5 Standard Chemical Solution For Surface Preparation Of SiC Substrates 4-26
4.6 Interface Trap Densities For 4H-SiC Under Different Process Conditions. 4-31
